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                    科研創新

                    • Hongjing Huo, Peng Xiang, Liyang Zhang, Ni Yin, and Kai Cheng
                      Defect Control in GaN-on-Si wafers for power electronics applications
                      2018 CSW 2018 Compound Semiconductor Week). May. 2018, Boston, America.
                    • Liyang Zhang, Kai Liu, Peng Xiang, Hongjing Huo, Ni Yin, and Kai Cheng
                      High Quality 200 mm GaN-on-Si Blue LED for ?LED Display Application
                      2018 CSW 2018 Compound Semiconductor Week). May. 2018, Boston, America.
                    • Peng Xiang, Liyang Zhang, and Kai Cheng
                      Growth of III-Nitrides PIN Diodes on Large Size Si Substrates for Power and Display
                      2018 GaN Marathon. April. 2018, Padova, Italy.
                    • Liyang Zhang, Kai Liu, Peng Xiang, Hongjing Huo, Ni Yin, and Kai Cheng
                      Making microLEDs on 200mm silicon
                      Compound Semiconductor. 24, 46 (2018).
                    • Yuhao Zhang, Mengyang Yuan, Nadim Chowdhury, Kai Cheng, and Tomas Palacios,
                      720V/0.35mΩ·cm2 Fully-Vertical GaN-on-Si Power Diodes by Selective Removal of Si substrates and buffer layers
                      IEEE Electron Device Letters. 39, 5 (2018).
                    • Yongle Qi, Yumeng Zhu, Jiang Zhang, Xinpeng Lin, Kai Cheng, Lingli Jiang, Hongyu Yu
                      Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-based AlGaN/GaN MIS-HEMT
                      IEEE Transactions on Electron Devices. 65, 5 (2018).
                    • R. A. Khadar, C. Liu, L. Zhang, P. Xiang, K. Cheng, and E. Matioli
                      820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2
                      IEEE Electron Device Letters. 39, 3 (2018).
                    • Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Lingli Jiang, Elina Lervolino, Kai Cheng, Hongyu Yu
                      A study on AlGaN/GaN HEMT characteristics at cryogenic temperatures
                      APWS 2017 (Asia-Pacific Workshop on Widegap Semiconductors, 2017). Sep. 2017, Qingdao, China.
                    • Kai Liu, Liyang Zhang, Peng Xiang, Hongjing Huo, Hao Ding, Ni Yin, and Kai Cheng
                      Growth and Characterization of AlInN/GaN Heterostructures
                      APWS 2017 (Asia-Pacific Workshop on Widegap Semiconductors, 2017). Sep. 2017, Qingdao, China.
                    • Hongjing Huo, Kai Liu, and Kai Cheng
                      Defect Inspection on GaN-on-SiC wafer
                      APWS 2017 (Asia-Pacific Workshop on Widegap Semiconductors, 2017). Sep. 2017, Qingdao, China.
                    • Liyang Zhang, Peng Xiang, Kai Liu, Hongjing Huo, Hao Ding, Ni Yin and Kai Cheng
                      Thick (6μm) n-type GaN-on-Si Epi-Layers for Vertical Power Devices
                      CS Mantech 2017 (2017 International Conference on Compound Semiconductor Manufacturing Technology), May, 2017, California, USA.
                    • Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng and Bo Shen
                      A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices
                      IEEE Electron Device Lett. 37, 377 (2016)
                    • Peng Xiang, Kai Liu, Hongjing Huo, Lei Feng, Hui Zhang, Hong Zhu, and Kai Cheng
                      High Quality AlGaN/GaN HEMT Structures Grown on 200mm Si
                      11th International Conference on Nitride Semiconductor). August, 2015, Beijing, China.
                    • Peng Xiang, Lei Feng, Kai Liu, Hui Zhang, Hong Zhu, Hongjing Huo, Kai Cheng
                      Large Diameter GaN-on-Si Technology for Power Electronics Applications
                      2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices. June, 2015. Jeju, Korea.
                    • Kai Cheng
                      Trimming the thickness of high-voltage GaN-on-Silicon HEMTs
                      Compound Semiconductor 21, 36 (2015).?
                    福建11选五走势图
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